JPS595720A - 酸化亜鉛薄膜の電極構造 - Google Patents
酸化亜鉛薄膜の電極構造Info
- Publication number
- JPS595720A JPS595720A JP57114445A JP11444582A JPS595720A JP S595720 A JPS595720 A JP S595720A JP 57114445 A JP57114445 A JP 57114445A JP 11444582 A JP11444582 A JP 11444582A JP S595720 A JPS595720 A JP S595720A
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- electrode
- thin film
- oxide thin
- electrode structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 47
- 239000010409 thin film Substances 0.000 title claims abstract description 36
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 abstract description 8
- 239000010408 film Substances 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 238000010894 electron beam technology Methods 0.000 abstract description 3
- 230000010355 oscillation Effects 0.000 abstract description 3
- 238000010884 ion-beam technique Methods 0.000 abstract description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 210000002414 leg Anatomy 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 229910018885 Pt—Au Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/21—Crystal tuning forks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57114445A JPS595720A (ja) | 1982-06-30 | 1982-06-30 | 酸化亜鉛薄膜の電極構造 |
| US06/500,828 US4433264A (en) | 1982-06-30 | 1983-06-03 | Electrode structure for a zinc oxide thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57114445A JPS595720A (ja) | 1982-06-30 | 1982-06-30 | 酸化亜鉛薄膜の電極構造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS595720A true JPS595720A (ja) | 1984-01-12 |
| JPH0158890B2 JPH0158890B2 (en]) | 1989-12-14 |
Family
ID=14637907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57114445A Granted JPS595720A (ja) | 1982-06-30 | 1982-06-30 | 酸化亜鉛薄膜の電極構造 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4433264A (en]) |
| JP (1) | JPS595720A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013183030A (ja) * | 2012-03-02 | 2013-09-12 | Panasonic Corp | 太陽電池およびその製造方法 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60137112A (ja) * | 1983-12-26 | 1985-07-20 | Murata Mfg Co Ltd | 圧電振動子 |
| US4538347A (en) * | 1984-06-18 | 1985-09-03 | Gte Laboratories Incorporated | Method for making a varistor package |
| JPS6146609A (ja) * | 1984-08-10 | 1986-03-06 | Murata Mfg Co Ltd | 圧電振動子 |
| JPS61131607A (ja) * | 1984-11-29 | 1986-06-19 | Murata Mfg Co Ltd | 圧電振動子ウエハおよび圧電振動子の製造方法 |
| JP3039971B2 (ja) * | 1989-09-19 | 2000-05-08 | 株式会社日立製作所 | 接合型圧電装置及び製造方法並びに接合型圧電素子 |
| US5233261A (en) * | 1991-12-23 | 1993-08-03 | Leybold Inficon Inc. | Buffered quartz crystal |
| US5438231A (en) * | 1993-08-23 | 1995-08-01 | Rockwell International Corporation | Thin film micromechanical resonator gyro |
| US6339276B1 (en) * | 1999-11-01 | 2002-01-15 | Agere Systems Guardian Corp. | Incremental tuning process for electrical resonators based on mechanical motion |
| DE10316716A1 (de) * | 2003-04-11 | 2004-10-28 | Epcos Ag | Bauelement mit einer piezoelektrischen Funktionsschicht |
| CN101908815B (zh) * | 2009-06-02 | 2015-04-08 | 易音特电子株式会社 | 双模振动器 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3846649A (en) * | 1973-06-18 | 1974-11-05 | Rca Corp | Piezoelectric transducer comprising oriented zinc oxide film and method of manufacture |
| USB398479I5 (en]) * | 1973-07-20 | |||
| JPS51114051A (en) * | 1975-03-31 | 1976-10-07 | Noto Denshi Kogyo Kk | Tuning fork vibrator |
| JPS53153832U (en]) * | 1977-05-09 | 1978-12-04 | ||
| JPS5538785A (en) * | 1978-09-12 | 1980-03-18 | Murata Mfg Co Ltd | Voltage tuning fork |
-
1982
- 1982-06-30 JP JP57114445A patent/JPS595720A/ja active Granted
-
1983
- 1983-06-03 US US06/500,828 patent/US4433264A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013183030A (ja) * | 2012-03-02 | 2013-09-12 | Panasonic Corp | 太陽電池およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US4433264A (en) | 1984-02-21 |
| JPH0158890B2 (en]) | 1989-12-14 |
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